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NTB65N02R, NTP65N02R Product Preview Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK
http://onsemi.com Features
* * * * *
Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Fast Switching
65 A, 24 V RDS(on) = 8.3 mW (TYP)
D
MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Symbol VDSS VGS ID IDM PD TJ and Tstg EAS Value 24 20 65 160 78 -55 to 150 TBD Unit Vdc Vdc A A W C 4 mJ TO-220AB CASE 221A Style 5 xxxxx YWW S G
Drain Current (Continuous @ TA = 25C (Note 3) Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Single Pulse Drain-to Source Avalanche Energy - Starting TJ=25C (VDD = 50 Vdc, VGS = 5 Vdc, IL = Apk, L = 1 mH, RG = 25 W) Thermal Resistance Junction-to-Case Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8" from Case for 10 Seconds
MARKING DIAGRAMS
RqJC RqJA RqJA TL
1.6 67 120 260
C/W 1 C D2PAK CASE 418B Style 2 2 3
1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2). 3. Chip current capability limited by package.
4 2 13
xxxxx YWW
PIN ASSIGNMENT
PIN 1 2 3 4 FUNCTION Gate Drain Source Drain
xxxxx Y WW
= Specific Device Code = Year = Work Week
ORDERING INFORMATION
Device NTB65N02R NTB65N02RT4 Package D2PAK D2PAK TO-220AB Shipping 50 Units/Rail 800 Tape & Reel 50 Units/Rail
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
NTP65N02R
(c) Semiconductor Components Industries, LLC, 2002
1
October, 2002 - Rev. 0
Publication Order Number: NTB65N02R/D
NTB65N02R, NTP65N02R
ELECTRICAL CHARACTERISTICS (TJ = 25C Unless otherwise specified)
Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 4) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 4) (VGS = 4.5 Vdc, ID = 15 Adc) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 30 Adc) Forward Transconductance (Note 4) (VDS = 10 Vdc, ID = 15 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VGS = 4.5 Vdc, ID = 30 Adc, VDS = 10 Vdc) (Note 4) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On Voltage On-Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 4) ( (IS = 30 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125C) VSD - - - - - - - 0.88 1.10 0.80 0 80 15.5 12.6 2.6 0.005 1.2 - - - - - - mC Vdc (VGS = 5 Vdc, VDD = 10 Vdc, ID = 30 Adc, RG = 3 W) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 11.2 52 10 4 8.4 3.7 4.04 20 100 20 10 12 - - nC ns ( (VDS = 24 Vdc, VGS = 0 V f = 1 MHz) ) Ciss Coss Crss - - - 1050 394 88 1470 550 120 pF VGS(th) 1.0 - RDS(on) - - - gFS - 20 - 10.5 8.3 9.5 12.5 10.5 - Mhos 1.5 -4.1 2.0 - Vdc mV/C mW V(br)DSS 24 - IDSS - - IGSS - - - - 1.5 15 100 nAdc 27.5 25.5 - - Vdc mV/C mAdc Symbol Min Typ Max Unit
Reverse Recovery Time (IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 4) Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperatures.
trr ta tb QRR
ns
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NTB65N02R, NTP65N02R
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE AA
-T- B
4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
F T S
C
Q
123
A U K
H Z L V G D N R J
STYLE 5: PIN 1. 2. 3. 4.
D2PAK CASE 418B-04 ISSUE G
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40
C E -B-
4
V W
A
1 2 3
S
-T-
SEATING PLANE
K G D H
3 PL M
W J
0.13 (0.005)
TB
M
STYLE 2: PIN 1. 2. 3. 4.
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NTB65N02R, NTP65N02R
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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NTB65N02R/D

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